IRFL024ZTRPBF

MOSFET N-CH 55V 5.1A SOT223

Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Серия	HEXFET®
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Logic Level Gate
Rds On (Max) @ Id, Vgs	57.5 mOhm @ 3.1A, 10V
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	5.1A
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) @ Vgs	14nC @ 10V
Input Capacitance (Ciss) @ Vds	340pF @ 25V
Power - Max	1W
Тип монтажа	Поверхностный
Корпус (размер)	TO-261-4, TO-261AA
Корпус	SOT-223

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