Наименование  | 
						
							 Кол-во 
						 | 
						
							 Цена 
						 | 
				  
|---|---|---|
| CSD16409Q3 (TEXAS INSTRUMENTS) | 1350 | 63.00 | 
Параметр  | 
						Значение  | 
					
|---|---|
| Lead Free Status / RoHS Status | Lead free by exemption / RoHS compliant by exemption | 
| Серия | NexFET™ | 
| FET Type | MOSFET N-Channel, Metal Oxide | 
| FET Feature | Logic Level Gate | 
| Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 17A, 10V | 
| Drain to Source Voltage (Vdss) | 25V | 
| Current - Continuous Drain (Id) @ 25° C | 60A | 
| Vgs(th) (Max) @ Id | 2.3V @ 250µA | 
| Gate Charge (Qg) @ Vgs | 5.6nC @ 4.5V | 
| Input Capacitance (Ciss) @ Vds | 800pF @ 12.5V | 
| Power - Max | 2.6W | 
| Тип монтажа | Поверхностный | 
| Корпус (размер) | 8-SON | 
| Корпус | 8-SON | 
