Наименование  | 
						
							 Кол-во 
						 | 
						
							 Цена 
						 | 
				  
|---|---|---|
| IRFB4410Z | 368 | 67.38 | 
Параметр  | 
						Значение  | 
					
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | 
| Серия | HEXFET® | 
| FET Type | MOSFET N-Channel, Metal Oxide | 
| FET Feature | Logic Level Gate | 
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 58A, 10V | 
| Drain to Source Voltage (Vdss) | 100V | 
| Current - Continuous Drain (Id) @ 25° C | 97A | 
| Vgs(th) (Max) @ Id | 4V @ 150µA | 
| Gate Charge (Qg) @ Vgs | 120nC @ 10V | 
| Input Capacitance (Ciss) @ Vds | 4820pF @ 50V | 
| Power - Max | 230W | 
| Тип монтажа | Выводной | 
| Корпус (размер) | TO-220-3 | 
| Корпус | TO-220AB |