IRFD220
Версия для печати
Полевой транзистор N-канальный (Vds=200V, Id=0.8A@T=25C, Id=0.5A@T=100C, Rds=0.8 R, P=1.0W, -55 to +150C).Наименование |
Кол-во
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Цена
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| IRFD220 | 2801 | 48.58 руб. | |
Технические характеристики IRFD220
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 800 mOhm @ 480mA, 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 800mA |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 14nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 260pF @ 25V |
| Power - Max | 1W |
| Тип монтажа | Выводной |
| Корпус (размер) | 4-DIP (0.300", 7.62mm) |
| Корпус | 4-DIP, Hexdip, HVMDIP |
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IRFD220 Power Mosfet (vdss=200v, Rds (on) =0.80ohm, Id=0.80a)
Производитель:
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