MJD50T4G
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| MJD50T4G (ON SEMICONDUCTOR) | 1996 | 50.40 руб. | |
Технические характеристики MJD50T4G
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 200µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
| Power - Max | 1.56W |
| Frequency - Transition | 10MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | DPAK-3 |
