Наименование |
Кол-во
|
Цена
|
---|---|---|
SI2323DS-T1-E3 | 1 |
Параметр |
Значение |
---|---|
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | TrenchFET® |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 39 mOhm @ 4.7A, 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 3.7A |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) @ Vgs | 19nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 1020pF @ 10V |
Power - Max | 750mW |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
Корпус | SOT-23-3 (TO-236) |