SI2337DS-T1-E3

MOSFET P-CH 80V 2.2A SOT23-3

Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Серия	TrenchFET®
FET Type	MOSFET P-Channel, Metal Oxide
FET Feature	Logic Level Gate
Rds On (Max) @ Id, Vgs	270 mOhm @ 1.2A, 10V
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25° C	2.2A
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) @ Vgs	17nC @ 10V
Input Capacitance (Ciss) @ Vds	500pF @ 40V
Power - Max	2.5W
Тип монтажа	Поверхностный
Корпус (размер)	TO-236-3, SC-59, SOT-23-3
Корпус	SOT-23-3 (TO-236)

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