2N7002W
Версия для печати
N-channel enhancement mode field effect transistorНаименование |
Кол-во
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Цена
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| 2N7002W (DIOTEC) | 20153 | 4.58 руб. | |
Технические характеристики 2N7002W
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 7.5 Ohm @ 50mA, 5V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 115mA |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Input Capacitance (Ciss) @ Vds | 50pF @ 25V |
| Power - Max | 200mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | SC-70, SOT-323 |
| Корпус | SC-70 |
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2N7002W MOSFET N-Channel Enhancement Mode Field Effect Transistor
Производитель:
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