BSP250
Версия для печати
P-channel enhancement mode vertical d-mos transistorНаименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| BSP250 (INFINEON) | 35 | 67.18 руб. | |
Технические характеристики BSP250
| FET Type | MOSFET P-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 1A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 3A |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 250pF @ 20V |
| Power - Max | 1.65W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | SOT-223 |
|
BSP250 MOSFET P-channel enhancement mode vertical D-MOS transistor
Производитель:
|
||
