BSP297
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| BSP297 | 80 |
|
|
Технические характеристики BSP297
| Drain to Source Voltage (Vdss) | 200V |
| Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 660mA, 10v |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | SIPMOS® |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Current - Continuous Drain (Id) @ 25° C | 660mA |
| Vgs(th) (Max) @ Id | 1.8V @ 400µA |
| Gate Charge (Qg) @ Vgs | 16.1nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 357pF @ 25V |
| Power - Max | 1.8W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | PG-SOT223-4 |
