BSS138DW
Версия для печати
Dual n-channel enhancement mode field effect transistorТехнические характеристики BSS138DW
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 220mA, 10V |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 200mA |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Input Capacitance (Ciss) @ Vds | 50pF @ 10V |
| Power - Max | 200mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 6-TSSOP, SC-88, SOT-363 |
| Корпус | SOT-363 |
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BSS138DW MOSFET DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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