FQT4N20LTF
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| FQT4N20LTF | 4 |
|
|
Технические характеристики FQT4N20LTF
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | QFET™ |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 1.35 Ohm @ 425mA, 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 850mA |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 5.2nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 310pF @ 25V |
| Power - Max | 2.2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | SOT-223-3 |
