Наименование |
Кол-во
|
Цена
|
---|---|---|
IRF5803TRPBF (VISHAY) | 432 | 85.02 |
Параметр |
Значение |
---|---|
Vgs(th) (Max) @ Id | 3V @ 250µA |
Current - Continuous Drain (Id) @ 25° C | 3.4A |
Drain to Source Voltage (Vdss) | 40V |
Rds On (Max) @ Id, Vgs | 112 mOhm @ 3.4A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET P-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Gate Charge (Qg) @ Vgs | 37nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1110pF @ 25V |
Power - Max | 2W |
Тип монтажа | Поверхностный |
Корпус (размер) | Micro6™(TSOP-6) |
Корпус | Micro6™(TSOP-6) |