IRF640SPBF
Версия для печати
N-Ch 200V 18A 3,1W 0,18RНаименование |
Кол-во
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Цена
|
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|---|---|---|---|
| IRF640SPBF (VISHAY) | 43 | 118.39 руб. | |
Технические характеристики IRF640SPBF
| Gate Charge (Qg) @ Vgs | 70nC @ 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 18A |
| Drain to Source Voltage (Vdss) | 200V |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 11A, 10V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 1300pF @ 25V |
| Power - Max | 130W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
| Корпус | D2PAK |
