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IRF9952PBF
 Версия для печати
Транзистор N+P-канальный 30V 3,5/2,3A 2,0W
Технические характеристики IRF9952PBF
| Power - Max |
2W |
| Input Capacitance (Ciss) @ Vds |
190pF @ 15V |
| Gate Charge (Qg) @ Vgs |
14nC @ 10V |
| Vgs(th) (Max) @ Id |
1V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C |
3.5A, 2.3A |
| Drain to Source Voltage (Vdss) |
30V |
| Rds On (Max) @ Id, Vgs |
100 mOhm @ 2.2A, 10V |
| FET Feature |
Logic Level Gate |
| FET Type |
N and P-Channel |
| Серия |
HEXFET® |
| Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
| Тип монтажа |
Поверхностный |
| Корпус (размер) |
8-SOIC (0.154", 3.90mm Width) |
| Корпус |
8-SO |
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