IRFB4410Z
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRFB4410Z | 368 | 67.38 руб. | |
Технические характеристики IRFB4410Z
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 58A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 97A |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Gate Charge (Qg) @ Vgs | 120nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 4820pF @ 50V |
| Power - Max | 230W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
