IRFP4668PbF
Версия для печати
200v single n-channel hexfet power mosfet in a to-247acНаименование |
Кол-во
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Цена
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| IRFP4668PBF | 640 | 241.48 руб. | |
Технические характеристики IRFP4668PbF
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 9.7 mOhm @ 81A, 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 130A |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 241nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 10720pF @ 50V |
| Power - Max | 520W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-247-3 (TO-247AC) |
| Корпус | TO-247AC |
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IRFP4668PbF MOSFET 200V Single N-Channel HEXFET Power MOSFET in a TO-247AC
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