Наименование |
Кол-во
|
Цена
|
|---|---|---|
| IRFU5305PBF | 1180 | 64.51 |
Параметр |
Значение |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 31A |
| Drain to Source Voltage (Vdss) | 55V |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 16A, 10V |
| FET Feature | Standard |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Gate Charge (Qg) @ Vgs | 63nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1200pF @ 25V |
| Power - Max | 110W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-251-3 Long Leads, IPak, TO-251AB |
| Корпус | I-Pak |