IRLI520N
Версия для печати
Hexfet power mosfets discrete n-channelНаименование |
Кол-во
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Цена
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| IRLI520N (INTERNATIONAL RECTIFIER) | 80 | 158.76 руб. | |
Технические характеристики IRLI520N
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 6A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 8.1A |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 20nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 440pF @ 25V |
| Power - Max | 30W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 Full Pack |
| Корпус | TO-220AB Full-Pak |
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IRLI520N MOSFET HEXFET Power MOSFETs Discrete N-Channel
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