NTHD4508NT1G

Gate Charge (Qg) @ Vgs	4nC @ 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Current - Continuous Drain (Id) @ 25° C	3A
Drain to Source Voltage (Vdss)	20V
Rds On (Max) @ Id, Vgs	75 mOhm @ 3.1A, 4.5V
FET Feature	Logic Level Gate
FET Type	2 N-Channel (Dual)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) @ Vds	180pF @ 10V
Power - Max	1.13W
Тип монтажа	Поверхностный
Корпус (размер)	8-ChipFET™
Корпус	ChipFET