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DTC114ES
 Версия для печати
NPN DIGITAL, 50V, 50mA, 10/10кОм
Технические характеристики DTC114ES
| Voltage - Collector Emitter Breakdown (Max) |
50V |
| Current - Collector (Ic) (Max) |
50mA |
| Transistor Type |
NPN - Pre-Biased |
| Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
| Resistor - Base (R1) (Ohms) |
10K |
| Resistor - Emitter Base (R2) (Ohms) |
10K |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 500µA, 10mA |
| Frequency - Transition |
250MHz |
| Power - Max |
300mW |
| Тип монтажа |
Выводной |
| Корпус (размер) |
SC-72-3, SPT |
| Корпус |
SPT |
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