MMUN2211LT1G

Версия для печати Транзистор n-p-n 50V 100mA SOT23

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MMUN2211LT1G (ON SEMICONDUCTOR) 4554 2.88 руб. 

Технические характеристики MMUN2211LT1G

Lead Free Status / RoHS Status Lead free / RoHS Compliant
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 10K
Resistor - Emitter Base (R2) (Ohms) 10K
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 246mW
Тип монтажа Поверхностный
Корпус (размер) TO-236-3, SC-59, SOT-23-3
Корпус SOT-23-3
Product Change Notification Wire Change 14/Oct/2008 Possible Adhesion Issue 11/July/2008