MMUN2213LT1G

Версия для печати

Описание MMUN2213LT1G

TRANS BRT NPN 100MA 50V SOT23

Технические характеристики MMUN2213LT1G

Lead Free Status / RoHS Status Lead free / RoHS Compliant
Product Change Notification Wire Change 14/Oct/2008 Possible Adhesion Issue 11/July/2008
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 47K
Resistor - Emitter Base (R2) (Ohms) 47K
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 246mW
Тип монтажа Поверхностный
Корпус (размер) TO-236-3, SC-59, SOT-23-3
Корпус SOT-23-3