MUN2211T1G

Версия для печати

Технические характеристики MUN2211T1G

Lead Free Status / RoHS Status Lead free / RoHS Compliant
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 10K
Resistor - Emitter Base (R2) (Ohms) 10K
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 338mW
Тип монтажа Поверхностный
Корпус (размер) TO-236-3, SC-59, SOT-23-3
Корпус SC-59