MJD45H11G
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| MJD45H11G (ONSEMI) | 172 | 88.01 руб. | |
Технические характеристики MJD45H11G
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 8A |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V |
| Power - Max | 1.75W |
| Frequency - Transition | 90MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | DPAK-3 |
