BCR 10PN H6327
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| BCR 10PN H6327 | 106 |
|
|
Описание BCR 10PN H6327
TRANS NPN/PNP DGTL 50V SOT363Технические характеристики BCR 10PN H6327
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 10K |
| Resistor - Emitter Base (R2) (Ohms) | 10K |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Frequency - Transition | 130MHz |
| Power - Max | 250mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 6-TSSOP, SC-88, SOT-363 |
| Корпус | PG-SOT363 |
