BC847BPDW1T1G

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Технические характеристики BC847BPDW1T1G

Lead Free Status / RoHS Status Lead free / RoHS Compliant
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 380mW
Frequency - Transition 100MHz
Тип монтажа Поверхностный
Корпус (размер) 6-TSSOP, SC-88, SOT-363
Корпус SOT-363
Product Change Notification Wire Change 08/Jun/2009