2N7002ET1G
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| 2N7002ET1G | 20800 | 2.15 руб. | |
Технические характеристики 2N7002ET1G
| Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 240mA, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 260mA |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 0.81nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 26.7pF @ 25V |
| Power - Max | 300mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
| Product Change Notification | Possible Adhesion Issue 11/July/2008 Wire Change for SOT23 Pkg 26/May |
