BSH108,215
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| BSH108,215 (NEX) | 2400 | 21.40 руб. | |
Описание BSH108,215
MOSFET N-CH 30V 1.9A SOT23Технические характеристики BSH108,215
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchMOS™ |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 1A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 1.9A |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Gate Charge (Qg) @ Vgs | 10nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 190pF @ 10V |
| Power - Max | 830mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | TO-236AB |
