IRFD210PBF
Версия для печати
Транзистор N-Канальный 200V 0,6A 1,0W 1,5RТехнические характеристики IRFD210PBF
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 360mA, 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 600mA |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 8.2nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 140pF @ 25V |
| Power - Max | 1W |
| Тип монтажа | Выводной |
| Корпус (размер) | 4-DIP (0.300", 7.62mm) |
| Корпус | 4-DIP, Hexdip, HVMDIP |
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IRFD210PBF MOSFET HEXFET® Power MOSFET
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