IRFH5406TRPBF

Input Capacitance (Ciss) @ Vds	1256pF @ 25V
Gate Charge (Qg) @ Vgs	35nC @ 10V
Vgs(th) (Max) @ Id	4V @ 50µA
Current - Continuous Drain (Id) @ 25° C	11A
Drain to Source Voltage (Vdss)	60V
Rds On (Max) @ Id, Vgs	14.4 mOhm @ 24A, 10V
FET Feature	Standard
FET Type	MOSFET N-Channel, Metal Oxide
Серия	HEXFET®
Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Power - Max	3.6W
Тип монтажа	Поверхностный
Корпус (размер)	8-PowerVQFN
Корпус	PQFN (5x6)