IRFHM830TRPBF
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRFHM830TRPBF (INFINEON) | 1 | 59.04 руб. | |
Описание IRFHM830TRPBF
MOSFET N-CH 30V 21A PQFNТехнические характеристики IRFHM830TRPBF
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 20A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 21A |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA |
| Gate Charge (Qg) @ Vgs | 31nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2155pF @ 25V |
| Power - Max | 2.7W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-VQFN Exposed Pad |
| Корпус | PQFN (3x3) |
