NTD18N06LT4G

Gate Charge (Qg) @ Vgs	22nC @ 5V
Vgs(th) (Max) @ Id	2V @ 250µA
Current - Continuous Drain (Id) @ 25° C	18A
Drain to Source Voltage (Vdss)	60V
Rds On (Max) @ Id, Vgs	65 mOhm @ 9A, 5V
FET Feature	Logic Level Gate
FET Type	MOSFET N-Channel, Metal Oxide
Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) @ Vds	675pF @ 25V
Power - Max	55W
Тип монтажа	Поверхностный
Корпус (размер)	TO-252-3, DPak (2 Leads + Tab), SC-63
Корпус	DPAK-3