SI3437DV-T1-GE3
Версия для печати
Наименование |
Кол-во
|
Цена
|
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|---|---|---|---|
| SI3437DV-T1-GE3 (VISHAY) | 1 | 66.12 руб. | |
Описание SI3437DV-T1-GE3
MOSFET P-CH D-S 150V 6-TSOPТехнические характеристики SI3437DV-T1-GE3
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 750 mOhm @ 1.4A, 10V |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 1.4A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 19nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 510pF @ 50V |
| Power - Max | 3.2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 6-TSOP (0.065", 1.65mm Width) |
| Корпус | 6-TSOP |
