SI4156DY-T1-GE3
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| SI4156DY-T1-GE3 (VISHAY) | 848 | 133.14 руб. | |
Описание SI4156DY-T1-GE3
MOSFET N-CH D-S 30V 8-SOICТехнические характеристики SI4156DY-T1-GE3
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 6 mOhm @ 15.7A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 24A |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 42nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1700pF @ 15V |
| Power - Max | 6W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
