SI4401DDY-T1-GE3
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| SI4401DDY-T1-GE3 (VISHAY) | 480 | 68.38 руб. | |
Описание SI4401DDY-T1-GE3
MOSFET P-CH 40V 8-SOICТехнические характеристики SI4401DDY-T1-GE3
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 15 mOhm @ 10.2A, 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 16.1A |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 95nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3007pF @ 20V |
| Power - Max | 6.3W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
