SI4483ADY-T1-GE3
Версия для печати
Наименование |
Кол-во
|
Цена
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|---|---|---|---|
| SI4483ADY-T1-GE3 | 8 |
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Описание SI4483ADY-T1-GE3
MOSFET P-CH D-S 30V 8-SOICТехнические характеристики SI4483ADY-T1-GE3
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 8.8 mOhm @ 10A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 19.2A |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Gate Charge (Qg) @ Vgs | 135nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3900pF @ 15V |
| Power - Max | 5.9W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
