SI4840BDY-T1-E3
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| SI4840BDY-T1-E3 (VISHAY) | 80 | 126.00 руб. | |
Описание SI4840BDY-T1-E3
MOSFET N-CH D-S 40V 8-SOICТехнические характеристики SI4840BDY-T1-E3
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 12.4A, 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 19A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 50nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2000pF @ 20V |
| Power - Max | 6W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
