SI7145DP-T1-GE3
Версия для печати
Описание SI7145DP-T1-GE3
MOSFET P-CH D-S 30V 8-SOICТехнические характеристики SI7145DP-T1-GE3
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 2.6 mOhm @ 25A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 60A |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 413nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 15660pF @ 15V |
| Power - Max | 104W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | PowerPAK® SO-8 |
| Корпус | PowerPAK® SO-8 |

