SIHG20N50C-E3
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| SIHG20N50C-E3 (VISHAY) | 2000 | 165.31 руб. | |
Описание SIHG20N50C-E3
MOSFET N-CH 500V 20A TO247Технические характеристики SIHG20N50C-E3
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 270 mOhm @ 10A, 10V |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 76nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2942pF @ 25V |
| Power - Max | 292W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-247-3 |
| Корпус | TO-247AC |
