SUD09P10-195-GE3
Версия для печати
Описание SUD09P10-195-GE3
MOSFET P-CH 100V DPAKТехнические характеристики SUD09P10-195-GE3
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 195 mOhm @ 3.6A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 8.8A |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 34.8nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1055pF @ 50V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | TO-252, (D-Pak) |

